| PART |
Description |
Maker |
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
|
| NX7303CA-CC NX7303BA-CC NX7303BA |
InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR 155 Mb/s APPLICATION
1310 nm InGaAsP MQW FP laser diode for 155 Mb/s applications. With SC-UPC connector. Vertical mount flange.
|
http://
CEL[California Eastern Labs]
NEC
|
| KLT-155454 |
1550nm InGaAsP strained MQW FP-LD
|
KODENSHI KOREA CORP.
|
| ML976H11F |
InGaAsP - MQW -DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-231444 |
1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-255412 |
1550nm InGaAsP strained MQW DFB LD for 1.25G 2.0 TO CAN
|
KODENSHI KOREA CORP.
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| KLT-155452 |
1550nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
